English CV

           
       

Department of Applied Physics
Xi’an Jiaotong University
Xi’an, Shaanxi 710049, P.R China
Tel: +86-29-82663128
Email: gdchen@xjtu.edu.cn

 

Guangde Chen
Professor, School of Science
Xi'an Jiaotong University

       
Education
  . Fudan University Shanghai, China  
    B.S. Physics 1978.02-1982.01  
  . Xi'an Jiaotong University Xi'an, China  
    M.S. Optics 1985.05-1989.09  
       
Experience
  . Teaching Assistant Xi’an Jiaotong University, China  
    Department of Applied Physics 1982.02.-1987.10  
  . Lecturer Xi’an Jiaotong University, China  
    Department of Applied Physics 1987.11-1992.10  
  . Associate professor Xi’an Jiaotong University, China  
    Department of Applied Physics 1992.11-1997.10  
  . Associate Head Xi’an Jiaotong University, China  
    Department of Applied Physics 1993.05-1994.06  
  . Research professor Kansas State University, USA  
    Department of Physics 1994.06-1995.12  
  . Deputy Dean Xi’an Jiaotong University, China  
    School of Science 1996.04-2003.11  
  . Visiting professor University of Inchon, South Korea  
    Department of Physics 1997.02-1997.04  
  . Research professor Kansas State University, USA  
    Department of Physics 2001.07-2001.12  
  . Director Xi’an Jiaotong University, China  
    College Physics Foundation Lab 1997.06-2004.09  
  . Professor Xi’an Jiaotong University, China  
    Department of Applied Physics 1997.11-present  
       
Awards
  . The First Prize of Xi’an Jiaotong University Scientific and Technological Award 1997  
  . The Second Prize of Shaanxi Scientific and Technological Award 2003  
  . The Second Prize of Shaanxi Scientific and Technological Award 2004  
  . The First Prize of Shaanxi Teaching Achievement Award 2005  
  . The Second Prize of National Teaching Achievement Award 2005  
       
Research
  1. MATERIALS GROWTH  
   
To optimize growth conditions for III-nitrides, particularly for AlN. New methods to further reduce crystal defect density and enhanced doping efficiency will be explored. Because of our unique materials characterization capabilities, we are equipped with eyes for monitoring the material quality as well as for probing the fundamental optical properties of a wide range of semiconducting materials.
  
   
 
  2. OPTICAL STUDIES  
   
To investigate the mechanisms of optical transitions, light emitting diode emission, and lasing in nitride materials, to understand the fundamental optical transitions and dynamic processes, to study the physics components of nitride based optoelectronic devices, and to provide input for new approaches toward the improvement of materials quality and the optimization of optoelectronic devices.
  
   
 
  3. THEORETICAL CALCULATION  
   
Focused on developing first-principles electronic structure theory of solids, which includes studying: (i) electronic structures and stabilities of alloys, superlattices and interfaces; (ii)magnetic properties of semiconductors; (iii) optoelectronic properties of photovoltaic and light-emitting materials; (iv) defect physics in semiconductors and nanocrystals.
  
       
Membership
  . Member of a council, Chinese Physical Society  
  . Member, Steering Committee of Physics Education, Ministry of Education, China  
       
Publications
   
1. Ye Honggang, Chen Guangde, Wu Yelong, Structural and electronic properties of the adsorption of oxygen on AlN (10-10) and (11-20) surfaces: a first-principles study, Journal of Physical Chemistry C, 115, 1882 (2011);pdfPDF
  
   
 
   
2. Ye Honggang, Chen Guangde, Wu Yelong, Zhu Youzhang, Theoretical study of the stabilization mechanisms of the different stable oxygen incorporated (10-10) surfaces of III-nitrides. Journal of Applied Physics, 107, 043529(2010);pdfPDF
  
   
 
   
3. Ye Honggang, Chen Guangde, Wu Yelong, Zhu Youzhang, Wei Su-Huai, Stability of a planar-defect structure of the wurtzite AlN (10-10) surface: Density functional study, Physical Reviev B, 80, 033301(2009);pdfPDF
  
   
 
   
4. Wu Yelong, Chen Guangde, Ye Honggang, Zhu Youzhang, Wei Su-Huai, Origin of the phase transition of AlN, GaN, and ZnO nanowires, Applied Physics Letters, 94, 253101(2009);pdfPDF
  
   
 
   
5. Wu Yelong, Chen Guangde, Ye Honggang, Zhu Youzhang, Wei Su-Huai, Structural and electronic properties of 0001 AIN nanowires: A first-principles study, Journal of Applied Physics,104,084313 (2008);pdfPDF     
  
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