Yongmei Gan, Ph.D., Assoc. Prof.
Department of Industrial Automation
School of Electrical Engineering
Xi' an Jiaotong University
Western China Science And Technology Innovation Harbour
Xixian New District, Xi' an, Shaanxi, 710049, China
Education
B.A., Xi’an Technology University, China, 1989-1993
M.A., Xi’an Technology University, China, 1993-1996
Ph.D., Northwestern Polytechnical University, China, 1996-2000
Work Experience
Visiting researcher in University of Liverpool from Feb 2013 to May 2013
Visiting researcher in University of Toronto from Feb 2008 to Feb 2009
School of Electrical Engineering, Xi'an Jiao Tong University, Assistant Professor, 2000-2004; Associate Professor, 2004 to date
Visited Center for Intelligent Maintenance Systems(IMS) in University of Wisconsin-Milwaukee and Participated 2004 Automation Fair in Orlando,Florida, USA , Dec.27~Nov.4,2004
1. Design and fabrication of wide bandgap power semiconductor chip
2. Packaging and integration of power semiconductor devices
3. Power electronic converter topology and integration technology
4. Research on the reliability of power electronic devices and converters
5. Multi-core advanced packaging and system integration technology
[1] Zhang, TY , Wang, LL , Zhang, X , Zhang, J , Wang, Y , Yang, FT , Pei, YQ , Gan, YM, "Enhanced Thermal-Electrical Interconnect for Single-Sided Cooling SiC MOSFET Power Device Based on Polycrystalline Diamond," in IEEE Transactions on Power Electronics, ,vol. 40, no. 11, pp. 16327-16340, Nov 2025, doi: 10.1109/TPEL.2025.3587709.
[2] Chen, QL, Zhang, H, Ma, DK, Yuan, TS, Ding, PY, Guo, JC, Li, L, Lv, YS, Sun, PY, Wang, LL, Gan, YM, " An Ultrafast Short-Circuit Protection for High-Voltage SiC MOSFETs Based on Qdesat-Transfer Detection With Robust dv/dt Noise Immunity," in IEEE Transactions on Power Electronics, vol. 41, no. 6, pp. 8899-8909, Jun 2026, doi: 10.1109/TPEL.2026.3651457.
[3] L. Zhao, Y. Pei, L. Wang, L. Pei, W. Cao and Y. Gan, "Design Methodology of Bidirectional Resonant CLLC Charger for Wide Voltage Range Based on Parameter Equivalent and Time Domain Model," in IEEE Transactions on Power Electronics, doi: 10.1109/TPEL.2022.3170101.
[4] L. Wang et al., "Cu Clip-Bonding Method With Optimized Source Inductance for Current Balancing in Multichip SiC MOSFET Power Module," in IEEE Transactions on Power Electronics, vol. 37, no. 7, pp. 7952-7964, July 2022, doi: 10.1109/TPEL.2022.3141373.
Member, IEEE
Member, Chinese Association of Electric
Tel: 86-29-82667858
Email: ymgan@xjtu.edu.cn