Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement
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发布时间：2025-04-30
发布时间：2025-04-30
论文名称：Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement
发表刊物：2016 IEEE International Electron Devices Meeting (IEDM)
合写作者：J. Ma; Z. Chai; W. Zhang; B. Govoreanu; J. F. Zhang; Z. Ji; B. Benbakhti; G. Groeseneken; M. Jurczak
卷号：1
是否译文：否
发表时间：2016-12-03
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